OptiMOS®2 Power-Transistor
IPD10N03LA G
IPF10N03LA G
IPS10N03LA G
IPU10N03LA G
Product Summary
Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target application
V DS
25
V
R DS(on),max
10.4
mΩ
ID
30
A
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Superior thermal resistance
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
Type
IPD10N03LA
IPF10N03LA
IPS10N03LA
IPU10N03LA
Package
P-TO252-3-11
P-TO252-3-23
P-TO251-3-11
P-TO251-3-1
Marking
10N03LA
10N03LA
10N03LA
10N03LA
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T C=25 °C2)
30
T C=100 °C
30
Unit
A
Pulsed drain current
I D,pulse
T C=25 °C3)
210
Avalanche energy, single pulse
E AS
I D=30 A, R GS=25 Ω
80
mJ
Reverse diode dv /dt
dv /dt
I D=30 A, V DS=20 V,
di /dt =200 A/µs,
T j,max=175 °C
6
kV/µs
Gate source voltage4)
V GS
Power dissipation
P tot
Operating and storage temperature
T j, T stg
T C=25 °C
IEC climatic category; DIN IEC 68-1
Rev. 1.8
±20
V
52
W
-55 ... 175
°C
55/175/56
page 1
2008-04-14
Parameter
IPD10N03LA G
IPF10N03LA G
IPS10N03LA G
IPU10N03LA G
Values
Symbol Conditions
Unit
min.
typ.
max.
minimal footprint
-
-
2.9
75
6 cm2 cooling area5)
-
-
50
25
-
-
Thermal characteristics
Thermal resistance, junction - case
SMD version, device on PCB
R thJC
R thJA
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
Gate threshold voltage
V GS(th)
V DS=V GS, I D=20 µA
1.2
1.6
2
Zero gate voltage drain current
I DSS
V DS=25 V, V GS=0 V,
T j=25 °C
-
0.1
1
V DS=25 V, V GS=0 V,
T j=125 °C
-
10
100
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
10
100
nA
Drain-source on-state resistance
R DS(on)
V GS=4.5 V, I D=20 A
-
13.9
17.4
mΩ
V GS=10 V, I D=30 A
-
8.7
10.4
-
1
-
Ω
20
41
-
S
Gate resistance
RG
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=30 A
1)
J-STD20 and JESD22
2)
Current is limited by bondwire; with an R thJC=2.9 K/W the chip is able to carry 53 A.
3)
See figure 3
4)
T j,max=150 °C and duty cycle D
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